Перегляд за автором "Melnik, V.P."

Сортувати за: Порядок: Результатів:

  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Electrical properties of MIS structures with silicon nanoclusters 
    Bunak, S.V.; Ilchenko, V.V.; Melnik, V.P.; Hatsevych, I.M.; Romanyuk, B.N.; Shkavro, A.G.; Tretyak, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally ...
  • Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 
    Bunak, S.V.; Buyanin, A.A.; Ilchenko, V.V.; Marin, V.V.; Melnik, V.P.; Khacevich, I.M.; Tretyak, O.V.; Shkavro, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth ...
  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates 
    Valakh, M.Ya.; Gamov, D.V.; Dzhagan, V.M.; Lytvyn, O.S.; Melnik, V.P.; Romanjuk, B.M.; Popov, V.G.; Yukhymchuk, V.O. (Functional Materials, 2006)
    The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed ...